SI4505DY-T1 Datasheet, PDF (1/12 Pages) Vishay Siliconix – N- and P-Channel MOSFET

N- and P-Channel MOSFET
Si4505DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel
30
0.018 at V_GS = 10 V
0.027 at V_GS = 4.5 V
P-Channel
-8
0.042 at V_GS = - 4.5 V
0.060 at V_GS = - 2.5 V
I_D (A)
7.8
6.4
- 5.0
- 4.0
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information:Si4505DY-T1-E3 (Lead (Pb)-free)
Si4505DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Level Shift
• Load Switch
D₁
S₂
G₂
G₁
S₁
D₂
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
± 20
-8
V
±8
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current
I_DM
7.8
6.0
6.0
5.2
30
- 5.0
- 3.8
- 3.6
- 3.0
A
- 30
Continuous Source Current (Diode Conduction)^{a, b}
I_S
1.8
1.0
- 1.8
- 1.0
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
2
1.3
1.20
2
1.2
W
0.75
1.3
0.75
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
N-Channel
Typ.
Max.
50
62.5
85
105
30
40
P-Channel
Typ.
Max.
50
62.5
85
105
30
40
Unit
°C/W
Document Number: 71826
S09-0868-Rev. C, 18-May-09
www.vishay.com
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