SI4505DY-T1 Datasheet, PDF (3/12 Pages) Vishay Siliconix – N- and P-Channel MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
V_GS = 10 V thru 5 V
4V
32
32
Si4505DY
Vishay Siliconix
T_C = - 55 °C
25 °C
24
24
16
16
3V
8
8
125 °C
0
0
0.05
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2000
0.04
0.03
V_GS = 4.5 V
0.02
0.01
V_GS = 10 V
0.00
0
6
12
18
24
30
I _D - Drain Current (A)
On-Resistance vs. Drain Current
6
5
V_DS = 15 V
I_D = 7.8 A
4
3
2
1
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
1600
C_iss
1200
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
V_GS = 10 V
I_D = 7.8 A
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 71826
S09-0868-Rev. C, 18-May-09
www.vishay.com
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