SI4505DY-T1 Datasheet, PDF (6/12 Pages) Vishay Siliconix – N- and P-Channel MOSFET

Si4505DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
30
V_GS = 5 V thru 3.5 V
32
24
3V
24
18
2.5 V
16
12
T_C = - 55 °C
25 °C
125 °C
8
0
0
0.10
2V
1.5 V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2000
0.08
0.06
V_GS = 2.5 V
0.04
V_GS = 4.5 V
0.02
1600
C_iss
1200
800
C_rss
400
C_oss
0.00
0
6
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
5
V_DS = - 4 V
I_D = 5 A
4
3
2
1
1.4
V_GS = 4.5 V
I_D = 5 A
1.2
1.0
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 71826
S09-0868-Rev. C, 18-May-09