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SI4505DY-T1 Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel MOSFET
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Si4505DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 8 V
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currentb
ID(on)
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 4.5 V
VGS = 10 V, ID = 7.8 A
Drain-Source On-State Resistanceb
RDS(on)
VGS = - 4.5 V, ID = - 5.0 A
VGS = 4.5 V, ID = 6.4 A
VGS = - 2.5 V, ID = - 4.0 A
Forward Transconductanceb
gfs
VDS = 15 V, ID = 7.8 A
VDS = - 15 V, ID = - 5.0 A
Diode Forward Voltageb
VSD
IS = 1.8 A, VGS = 0 V
IS = - 1.8 A, VGS = 0 V
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 5 V, ID = 7.8 A
Qgs
P-Channel
Qgd
VDS = - 4 V, VGS = - 5 V, ID = - 5.0 A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
P-Channel
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = 1.8 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
0.8
- 0.45
20
- 20
Typ.a
0.015
0.030
0.022
0.048
18
12
0.73
- 0.75
11.5
13.5
3
2.2
4
3
15
21
8
45
35
60
10
55
30
50
Max. Unit
1.8
V
- 1.0
± 100
nA
± 100
1
-1
µA
5
-5
A
0.018
0.042
Ω
0.027
0.060
S
1.1
V
- 1.1
20
20
nC
25
40
15
70
55
ns
100
20
85
60
100
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71826
S09-0868-Rev. C, 18-May-09
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