BUF620 Datasheet, PDF (7/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

10
8
T_j = 125°C
6
saturated switching
R-load
I_C = 1A, I_B1 = 0.2A
4
T_j = 25°C
2
0
0
1
2
3
4
94 9124
–I_B2 / I_B1
Figure 16. t_s vs. –I_B2/I_B1
10
unsaturated (Baker clamp)
8 ^R-load
I_C = 1A, I_B1 = 0.2A
6
4
T_j = 125°C
2
0 ^{Tj = 25°C}
0
1
2
3
4
94 9126
–I_B2 / I_B1
Figure 17. t_s vs. –I_B2/I_B1
BUF620
Vishay Telefunken
1.0
0.8
0.6
T_j = 125°C
0.4
T_j = 25°C
0.2
saturated switching
R-load
I_C = 1A, I_B1 = 0.2A
0
0
1
2
3
4
94 9125
–I_B2 / I_B1
Figure 18. t_f vs. –I_B2/I_B1
1.0
unsaturated (Baker clamp)
R-load
0.8 _{IC = 1A, IB1 = 0.2A}
0.6
T_j = 125°C
0.4
0.2
T_j = 25°C
0
0
1
2
3
4
94 9127
–I_B2 / I_B1
Figure 19. t_f vs. –I_B2/I_B1
Document Number 86507
Rev. 2, 20–Jan–99
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