 English |
|
|
|
|
|
|
|
| BUF620 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor | |||
| |||
| ◁ |
BUF620
Vishay Telefunken
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Collector cut-off current
VCE = 700 V
ICES
50 mA
VCE = 700 V; Tcase = 150°C
ICES
0.5 mA
Collector-emitter breakdown
IC = 300 mA; L = 125 mH;
V(BR)CEO 400
V
voltage (figure 1)
Imeasure = 100 mA
Emitter-base breakdown voltage IE = 1 mA
V(BR)EBO 9
V
Collector-emitter saturation voltage IC = 0.6 A; IB = 0.15 A
VCEsat
0.1 0.2 V
IC = 2 A; IB = 0.7 A
VCEsat
0.2 0.3 V
Base-emitter saturation voltage
IC = 0.6 A; IB = 0.15 A
VBEsat
0.9 1.1 V
IC = 2 A; IB = 0.7 A
VBEsat
1 1.2 V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA
hFE
15
VCE = 2 V; IC = 0.6 A
hFE
15
VCE = 2 V; IC = 2 A
hFE
7
VCE = 5 V; IC = 4 A
hFE
4
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 4 A; VCEW 500
V
IB1 = 1.4 A; âIB2 = 0.4 A;
Dynamic saturation voltage
âVBB = 5 V
IC = 2 A; IB = 0.4 A; t = 1 ms
VCEsatdyn
10 15 V
IC = 2 A; IB = 0.4 A; t = 3 ms
VCEsatdyn
24V
Gain bandwidth product
IC = 500 mA; VCE = 10 V; f = 1
fT
MHz
8
MHz
www.vishay.de ⢠FaxBack +1-408-970-5600
2 (9)
Document Number 86507
Rev. 2, 20âJanâ99
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese