BUF620 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

BUF620
Vishay Telefunken
Typical Characteristics (T_case = 25_C unless otherwise specified)
6
5
4
3
2 ^{0.1 x IC < IB2 < 0.5 x IC}
V_CEsat < 2V
1
100
12.5 K/W
10
3.12 K/W
1
25 K/W
50 K/W
0.1
R_thJA = 135 K/W
0.01
0
0
95 10492
100 200 300 400 500 600
V_CE – Collector Emitter Voltage ( V )
Figure 4. V_CEW – Diagram
0.001
0
95 10519
25 50 75 100 125 150
T_case – Case Temperature ( °C )
Figure 7. P_tot vs.T_case
10
T_j = 25°C
8
6
4
2
0
0
94 9112
600mA ^800mA
I_B = 1A
400mA
200mA
100mA
50mA
2
4
6
8
10
V_CE - Collector Emitter Voltage (V)
Figure 5. I_C vs. V_CE
10
2A
1
0.6A 1.2A
0.1
I_C=3A
0.01
0.01
94 9115
0.1
1
10
I_B - Base Current (A)
Figure 8. V_CEsat vs. I_B
100
100
V_CE = 10V
10
V_CE = 5V
V_CE = 2V
T_j = 25°C
1
0.01
0.1
1
10
94 9113
I_C - Collector Current (A)
Figure 6. h_FE vs. I_C
Document Number 86507
Rev. 2, 20–Jan–99
T_j = 25°C
10 _{Tj = –25°C}
T_j = 125°C
V_CE = 2V
1
0.01
0.1
1
10
94 9114
I_C - Collector Current (A)
Figure 9. h_FE vs. I_C
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