BUF620 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

BUF620
Vishay Telefunken
Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Turn on time
Storage time
I_C = 0.6 A; I_B1 = 0.15 A;
–I_B2 = 0.3 A; V_S = 250 V
Fall time
Turn on time
Storage time
I_C = 2 A; I_B1 = 0.4 A;
–I_B2 = 1 A; V_S = 250 V
Fall time
Inductive load (figure 3)
Storage time
Fall time
I_C = 0.6 A; I_B1 = 0.15 A; –I_B2 = 0.3 A;
V_clamp = 300 V; L = 200 mH
Storage time
Fall time
I_C = 2 A; I_B1 = 0.4 A; –I_B2 = 1 A;
V_clamp = 300 V; L = 200 mH
Symbol Min
t_on
t_s
t_f
t_on
t_s
t_f
t_s
t_f
t_s
t_f
Typ
0.15
2.1
0.2
0.4
1
0.1
2.2
0.2
1
0.1
Max Unit
0.25 ms
3
ms
0.4
ms
0.6
ms
1.2
ms
0.15 ms
3
ms
0.3
ms
1.3
ms
0.15 ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
Document Number 86507
Rev. 2, 20–Jan–99
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