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BUF620 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor
BUF620
Vishay Telefunken
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase ≤ 25°C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
Value
Unit
VCEO
400
V
VCEW
500
V
VCES
700
V
VEBO
9
V
IC
4
A
ICM
6
A
IB
2
A
IBM
3
A
Ptot
40
W
Tj
150
°C
Tstg
–65 to +150 °C
Symbol
Value
Unit
RthJC
3.12
K/W
Document Number 86507
Rev. 2, 20–Jan–99
www.vishay.de • FaxBack +1-408-970-5600
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