91032 Datasheet, PDF (7/9 Pages) Vishay Siliconix – the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

IRF630S, SiHF630S
Vishay Siliconix
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
+
R_g
• dV/dt controlled by R_g
+
• Driver same type as D.U.T.
• I_SD controlled by duty factor “D”
- ^VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = 10 V^a
D.U.T. l_SD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V_DD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
I_SD
Note
a. V_GS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91032.
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000