91032 Datasheet, PDF (1/9 Pages) Vishay Siliconix – the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
200
V_GS = 10 V
43
7.0
23
Single
0.40
D²PAK (TO-263)
K
DS
G
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D²PAK (TO-263)
SiHF630S-GE3
IRF630SPbF
SiHF630S-E3
D²PAK (TO-263)
SiHF630STRL-GE3^a
IRF630STRLPbF^a
SiHF630STL-E3^a
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
Pulsed Drain Current^a
I_DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
T_C = 25 °C
P_D
T_A = 25 °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dt^c
dV/dt
D²PAK (TO-263)
SiHF630STRR-GE3^a
IRF630STRRPbF^a
SiHF630STR-E3^a
LIMIT
200
± 20
9.0
5.7
36
0.59
0.025
250
9.0
7.4
74
3.0
5.0
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000