91032 Datasheet, PDF (3/9 Pages) Vishay Siliconix – the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

IRF630S, SiHF630S
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Body Diode Characteristics
MIN. TYP. MAX. UNIT
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
D
-
-
9.0
Pulsed Diode Forward Current^a
integral reverse
A
G
I_SM
p - n junction diode
S
-
-
36
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 9.0 A, V_GS = 0 V^b
-
-
2.0
V
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
T_J = 25 °C, I_F = 5.9 A,
dI/dt = 100 A/μs^b
-
170 340 ns
-
1.1
2.2
μC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V_GS
Top 15 V
10 V
8.0 V
10¹
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10⁰
4.5 V
10^-1
10^-1
91032_01
20 µs Pulse Width
T_C = 25 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
V_GS
Top 15 V
10 V
10¹
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10⁰
4.5 V
10^-1
10^-1
91032_02
20 µs Pulse Width
T_C = 150 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000