91032 Datasheet, PDF (5/9 Pages) Vishay Siliconix – the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

IRF630S, SiHF630S
Vishay Siliconix
10¹
150 °C
25 °C
10⁰
0.5
91032_07
V_GS = 0 V
0.7
0.9
1.1
1.3
1.5
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10³
5
2
10²
5
2
10
5
2
1
5
2
0.1
0.1 ²
Operation in this area limited
by R_DS(on)
10 µs
100 µs
1 ms
10 ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
5 ₁ 2 5 ₁₀ 2 5 ₁₀₂ 2 5 ₁₀₃ 2
5 ₁₀₄
91032_08
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10
8
6
4
2
0
25
91032_09
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_g
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
Document Number: 91032
S11-1047-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000