91032 Datasheet, PDF (4/9 Pages) Vishay Siliconix – the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

IRF630S, SiHF630S
Vishay Siliconix
10¹
150 °C
10⁰
25 °C
10^-1
4
91032_03
20 µs Pulse Width
V_DS = 50 V
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
1600
1200
800
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
400
C_oss
C_rss
0
10⁰
91032_05
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
3.0 _{ID = 5.9 A}
V_GS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91032_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
20 _{ID = 5.9 A}
16
V_DS = 160 V
V_DS = 100 V
12
V_DS = 40 V
8
4
0
0
91032_06
For test circuit
see figure 13
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000