20MT120UFP Datasheet, PDF (7/11 Pages) Vishay Siliconix – 'Full Bridge' IGBT MTP (Ultrafast NPT IGBT), 40 A

20MT120UFP
"Full Bridge" IGBT MTP _{Vishay High Power Products}
(Ultrafast NPT IGBT), 40 A
40
10000
35
Cies
30
1000
25
Coes
20
15
10
0
200
400
600
800 1000
diF /dt (A/μs)
Fig. 19 - Typical Diode I_rr vs. dI_F/dt
V_CC = 400 V; V_GE = 15 V; I_CE = 5.0 A; T_J = 150 °C
100
Cres
10
0
20
40
60
80
100
VCE (V)
Fig. 21 - Typical Capacitance vs. V_CE
V_GE = 0 V; f = 1 MHz
3.0
2.5
5.0 Ω
10 Ω
30A
2.0
30 Ω
20A
1.5
50 Ω
10A
1.0
0.5
0.0
0
200 400 600 800 1000 1200
diF /dt (A/μs)
Fig. 20 - Typical Diode Q_rr vs. dI_F/dt
V_CC = 400 V; V_GE = 15 V; T_J = 150 °C
16
14
600V
12
10
8
6
4
2
0
0
40
80
120 160 200
Q _G, Total Gate Charge (nC)
Fig. 22 - Typical Gate Charge vs. V_GE
I_CE = 5.0 A; L = 600 μH
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τ_JτJ
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= i/Ri
R_2R2
τ_{2 τ2}
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.161 0.000759}
τ_{3 τ3}
0.210 0.017991
0.147 0.06094
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Document Number: 94505
Revision: 01-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
7