20MT120UFP Datasheet, PDF (3/11 Pages) Vishay Siliconix – 'Full Bridge' IGBT MTP (Ultrafast NPT IGBT), 40 A

20MT120UFP
"Full Bridge" IGBT MTP _{Vishay High Power Products}
(Ultrafast NPT IGBT), 40 A
DIODE SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage drop
I_C = 20 A
I_C = 40 A
V_FM
I_C = 20 A, T_J = 125 °C
I_C = 40 A, T_J = 125 °C
I_C = 20 A, T_J = 150 °C
Reverse recovery energy of the diode E_rec
Diode reverse recovery time
t_rr
Peak reverse recovery current
I_rr
V_GE = 15 V, R_g = 5 Ω, L = 200 μH
V_CC = 600 V, I_C = 20 A
T_J = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
2.48
3.28
2.44
3.45
2.21
420
98
33
MAX. UNITS
2.94
3.90
2.84
V
4.14
2.93
630 μJ
150 ns
50
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Operating junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
T_J
T_Stg
R_thJC
- 40
-
150
°C
- 40
-
125
-
0.35 0.52
-
0.40 0.61 °C/W
Case to sink per module
Clearance
Creepage
Mounting torque
Weight
R_thCS Heatsink compound thermal conductivity = 1 W/mK -
0.06
-
External shortest distance in air between 2 terminals 5.5
-
Shortest distance along external surface of the
insulating material between 2 terminals
8
-
-
mm
-
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
3 ± 10 %
Nm
the spread of the compound. Lubricated threads.
66
g
Document Number: 94505
Revision: 01-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
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