20MT120UFP Datasheet, PDF (6/11 Pages) Vishay Siliconix – 'Full Bridge' IGBT MTP (Ultrafast NPT IGBT), 40 A

20MT120UFP
Vishay High Power Products ^{"Full Bridge" IGBT MTP}
(Ultrafast NPT IGBT), 40 A
2.5
2
1.5
Eon
1
Eoff
0.5
0
0
10
20
30
40
50
I _C (A)
Fig. 13 - Typical Energy Loss vs. I_C
T_J = 125 °C; L = 1 mH; V_CC = 600 V
R_g = 5 Ω; V_GE = 15 V
1000
tf
td (off)
100
td (on)
tr
10
1000
100
td (off)
tf
td (on)
tr
10
1
0
10
20
30
40
50
RG (Ω)
Fig. 16 - Typical Switching Time vs. R_g
T_J = 150 °C; L = 1 mH; V_CC = 600 V
I_CE = 6 A; V_GE = 15 V
40
RG ₌ 5.0Ω
30
RG ₌₁₀ Ω
20
RG ₌₃₀ Ω
RG ₌₅₀ Ω
10
1
0
10
20
30
40
50
I _C (A)
Fig. 14 - Typical Switching Time vs. I_C
T_J = 125 °C; L = 1 mH; V_CC = 600 V
R_g = 5 Ω; V_GE = 15 V
1.2
1
Eon
0.8
0.6
0.4
Eoff
0.2
0
10
20
30
40
50
RG (Ω)
Fig. 15 - Typical Energy Loss vs. R_g
T_J = 125 °C; L = 1 mH; V_CC = 600 V
I_CE = 6 A; V_GE = 15 V
0
0 5 10 15 20 25 30 35
IF (A)
Fig. 17 - Typical Diode I_rr vs. I_F
T_J = 150 °C
40
30
20
10
0
0
10 20 30 40 50 60
RG (Ω)
Fig. 18 - Typical Diode I_rr vs. R_g
T_J = 150 °C; I_F = 5.0 A
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6
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Document Number: 94505
Revision: 01-Mar-10