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20MT120UFP Datasheet, PDF (2/11 Pages) Vishay Siliconix – 'Full Bridge' IGBT MTP (Ultrafast NPT IGBT), 40 A
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20MT120UFP
Vishay High Power Products "Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Collector to emitter breakdown voltage
V(BR)CES
Temperature coefficient of breakdown voltage ΔV(BR)CES/ΔTJ
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 3 mA (25 °C to 125 °C)
VGE = 15 V, IC = 20 A
1200
-
-
VGE = 15 V, IC = 40 A
-
Collector to emitter saturation voltage
VCE(on)
VGE = 15 V, IC = 20 A, TJ = 125 °C
-
VGE = 15 V, IC = 40 A, TJ = 125 °C
-
VGE = 15 V, IC = 20 A, TJ = 150 °C
-
Gate threshold voltage
Temperature coefficient of threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
4
VGE(th)/ΔTJ VCE = VGE, IC = 3 mA (25 °C to 125 °C) -
Transconductance
gfe
VCE = 50 V, IC = 20 A, PW = 80 μs
-
Zero gate voltage collector current
ICES (1)
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
-
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
Gate to emitter leakage current
IGES
VGE = ± 20 V
-
Note
(1) ICES includes also opposite leg overall leakage
TYP.
-
+ 1.3
3.29
4.42
3.87
5.32
3.99
-
- 14
17.5
-
0.7
2.9
-
MAX. UNITS
-
V
-
V/°C
3.59
4.66
4.11
V
5.70
4.27
6
- mV/°C
-
S
250 μA
3.0
mA
9.0
± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Qg
IC = 20 A
Qge
VCC = 600 V
Qgc
VGE = 15 V
Eon
VCC = 600 V, IC = 20 A, VGE = 15 V,
Eoff
Rg = 5 Ω, L = 1 mH, TJ = 25 °C,
energy losses include tail and
Etot
diode reverse recovery
Eon
VCC = 600 V, IC = 20 A, VGE = 15 V,
Eoff
Rg = 5 Ω, L = 1 mH, TJ = 125 °C,
energy losses include tail and
Etot
diode reverse recovery
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
Cies
Coes
Cres
RBSOA
SCSOA
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
TJ = 150 °C, IC = 120 A
VCC = 1000 V, Vp = 1200 V
Rg = 5 Ω, VGE = + 15 V to 0 V
TJ = 150 °C
VCC = 900 V, Vp = 1200 V
Rg = 5 Ω, VGE = + 15 V to 0 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
176
19
89
0.92
0.46
1.38
1.29
0.81
2.1
2530
344
78
MAX. UNITS
264
30
nC
134
-
-
-
mJ
-
-
-
3790
516 pF
117
Fullsquare
10
-
-
μs
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2
For technical questions, contact: indmodules@vishay.com
Document Number: 94505
Revision: 01-Mar-10
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