20MT120UFP Datasheet, PDF (1/11 Pages) Vishay Siliconix – 'Full Bridge' IGBT MTP (Ultrafast NPT IGBT), 40 A

20MT120UFP
Vishay High Power Products
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A
MTP
PRODUCT SUMMARY
V_CES
I_C at T_C = 25 °C
V_CE(on)
1200 V
40 A
3.29 V
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V_CE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED^® antiparallel diodes with ultrasoft reverse
recovery
• Low diode V_F
• Square RBSOA
• Aluminum nitride DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
Maximum power dissipation (only IGBT)
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 106 °C
T_C = 106 °C
Any terminal to case, t = 1 minute
T_C = 25 °C
T_C = 100 °C
MAX.
1200
40
20
100
100
25
100
± 20
2500
240
96
UNITS
V
A
V
W
Document Number: 94505
Revision: 01-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
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