VS-GP100TS60SFPBF Datasheet, PDF (6/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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VS-GP100TS60SFPbF
Vishay Semiconductors
0.1
0.50
0.01
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance Z_thJC Characteristics - (IGBT)
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0.1
0.50
0.20
0.10
0.01
0.05
0.02
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 20 - Maximum Thermal Impedance Z_thJC Characteristics - (Diode))
ORDERING INFORMATION TABLE
Device code _{VS- GP 100 T S 60 S F PbF}
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2
3
4
5
6
7
8
9
1 - Vishay Semiconductors product
2 - IGBT die technology (GP = Trench PT)
3 - Current rating (100 = 100 A)
4 - Circuit configuration (T = Half bridge)
5 - Package indicator (S = INT-A-PAK)
6 - Voltage code (60 = 600 V)
7 - Speed/type (S = standard speed IGBT)
8 - Diode type
9 - None = Standard production; PbF = Lead (Pb)-free
Revision: 11-Jun-15
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Document Number: 95721
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