VS-GP100TS60SFPBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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18.0
16.0
14.0
V_CC = 400 V
I_C = 100 A
12.0
10.0
8.0
6.0
4.0
2.0
0
0
200 400 600 800 1000 1200
Q_g (nC)
Fig. 7 - Typical Total Gate Charge vs. Gate to Emitter Voltage
7.5
6.5
T_J = 25 °C
5.5
4.5
3.5
T_J = 125 °C
2.5
1.5
0.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I_C (mA)
Fig. 8 - Typical IGBT Gate Threshold Voltage
10
1
T_J = 150 °C
0.1
0.01
T_J = 125 °C
0.001
0.0001
T_J = 25 °C
0.00001
100
200
300
400
500
600
V_CES (V)
Fig. 9 - Typical IGBT Zero Gate Voltage Collector Current
VS-GP100TS60SFPbF
Vishay Semiconductors
160
140
120
100
DC
80
60
40
20
0
0 20 40 60 80 100 120 140 160
I_F - Continuous Forward Current (A)
Fig. 10 - Maximum Diode Continuous Forward Current
vs. Case Temperature
200
180
160
140
120
100
80
60
40
20
0
0
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_FM (V)
Fig. 11 - Typical Diode Forward Characteristics
25
20
15
Eoff
10
5
Eon
0
0 20 40 60 80 100 120 140 160
I_C (A)
Fig. 12 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, V_CC = 300 V, R_g = 3.3 , V_GE = 15 V, L = 500 μH
Revision: 11-Jun-15
4
Document Number: 95721
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