VS-GP100TS60SFPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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VS-GP100TS60SFPbF
Vishay Semiconductors
“Half Bridge” IGBT INT-A-PAK, (Trench PT IGBT), 100 A
Proprietary Vishay IGBT Silicon “L Series”
INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C DC, T_C = 130 °C
V_CE(on) at 100 A, 25 °C
Speed
Package
Circuit
600 V
100 A
1.16 V
DC to 1 kHz
INT-A-PAK
Half bridge
FEATURES
• Trench PT IGBT technology
• FRED Pt^® anti-parallel diodes with fast recovery
• Very low conduction losses
• Al₂O₃ DBC
• UL pending
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
• Direct mounting to heatsink
• Very low junction to case thermal resistance
• Low EMI
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
I_CM
I_LM
V_GE
V_ISOL
Maximum power dissipation
P_D
Operating junction temperature range
T_J
Storage temperature range
T_Stg
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
MAX.
600
337
235
440
440
± 20
2500
781
312
-40 to +150
-40 to +125
UNITS
V
A
V
W
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V_BR(CES)
Collector to emitter voltage
V_CE(on)
Gate threshold voltage
Temperature coefficient of threshold voltage
Forward transconductance
Transfer characteristics
V_GE(th)
V_GE(th)/T_J
g_fe
V_GE
Collector to emitter leakage current
I_CES
Diode forward voltage drop
V_FM
Gate to emitter leakage current
I_GES
V_GE = 0 V, I_C = 500 μA
V_GE = 15 V, I_C = 100 A
V_GE = 15 V, I_C = 200 A
V_GE = 15 V, I_C = 100 A, T_J = 125 °C
V_CE = V_GE, I_C = 3.2 mA
V_CE = V_GE, I_C = 3.2 mA, (25 °C to 125 °C)
V_CE = 20 V, I_C = 50 A
V_CE = 20 V, I_C = 100 A
V_GE = 0 V, V_CE = 600 V
V_GE = 0 V, V_CE = 600 V, T_J = 125 °C
I_C = 100 A, V_GE = 0 V
I_C = 100 A, V_GE = 0 V, T_J = 125 °C
V_GE = ± 20 V
MIN.
600
-
-
-
4.9
-
-
-
-
-
-
-
-
TYP.
-
1.16
1.37
1.08
5.8
-27
93
10.2
1.0
300
1.36
1.17
-
MAX.
-
1.34
-
-
8.8
-
-
-
150
-
1.96
-
± 500
UNITS
V
mV/°C
S
V
μA
V
nA
Revision: 11-Jun-15
1
Document Number: 95721
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000