VS-GP100TS60SFPBF Datasheet, PDF (5/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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10000
1000
100
t_f
t_d(off)
t_d(on)
t_r
10
0 20 40 60 80 100 120 140 160
I_C (A)
Fig. 13 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, V_CC = 300 V, R_g = 3.3 , V_GE = 15 V, L = 500 μH
20
18
Eoff
16
14
12
10
8
6
Eon
4
2
0
0
5
10
15
20
25
30
R_g (Ω)
Fig. 14 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, V_CC = 300 V, I_C = 100 A, V_GE = 15 V, L = 500 μH
10 000
1000
100
t_f
t_d(off)
t_d(on)
t_r
10
0
5
10
15
20
25
30
R_g (Ω)
Fig. 15 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, V_CC = 300 V, I_C = 100 A, V_GE = 15 V, L = 500 μH
VS-GP100TS60SFPbF
Vishay Semiconductors
280
260
240
220
200
180
160
140
120
100
80
60
100
T_J = 125 °C
T_J = 25 °C
200
300
400
500
dI_F/dt (A/μs)
Fig. 16 - Typical Diode Reverse Recovery Time vs. dI_F/dt
V_rr = 200 V, I_F = 50 A
40
35
30
T_J = 125 °C
25
20
T_J = 25 °C
15
10
5
100
200
300
400
500
dI_F/dt (A/μs)
Fig. 17 - Typical Diode Reverse Recovery Current vs. dI_F/dt
V_rr = 200 V, I_F = 50 A
3300
3000
2700
T_J = 125 °C
2400
2100
1800
1500
1200
900
T_J = 25 °C
600
300
100
200
300
400
500
dI_F/dt (A/μs)
Fig. 18 - Typical Diode Reverse Recovery Charge vs. dI_F/dt)
V_rr = 200 V, I_F = 50 A
Revision: 11-Jun-15
5
Document Number: 95721
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