VS-GP100TS60SFPBF Datasheet, PDF (3/9 Pages) Vishay Siliconix – Trench PT IGBT technology

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160
140
120
100
DC
80
60
40
20
0
0 50 100 150 200 250 300 350 400
I_C - Continuous Collector Current (A)
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
1000
100
10
1
0.1
1
10
100
1000
V_CE (V)
Fig. 2 - IGBT Reverse BIAS SOA T_J = 150 °C, V_GE = 15 V
300
250
200
150
100
T_J = 25 °C
50
T_J = 150 °C
T_J = 125 °C
0
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
V_CE (V)
Fig. 3 - Typical IGBT Output Characteristics, V_GE = 15 V
VS-GP100TS60SFPbF
Vishay Semiconductors
200
180
V_GE = 12 V
160
V_GE = 15 V
V_GE = 18 V
140
120
V_GE = 9 V
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_CE (V)
Fig. 4 - Typical IGBT Output Characteristics, T_J = 125 °C
1.6
1.5
1.4
200 A
1.3
1.2
100 A
1.1
1.0
50 A
0.9
0.8
0.7
20 40 60 80 100 120 140 160
T_J (°C)
Fig. 5 - Collector to Emitter Voltage vs. Junction Temperature
100
V_CE = 20 V
80
60
T_J = 125 °C
40
T_J = 25 °C
20
0
3 4 5 6 7 8 9 10 11 12
V_GE (V)
Fig. 6 - Typical IGBT Transfer Characteristics
Revision: 11-Jun-15
3
Document Number: 95721
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