VS-GB75YF120UT Datasheet, PDF (6/10 Pages) Vishay Siliconix – IGBT 4 pack Module, 75 A

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VS-GB75YF120UT
Vishay Semiconductors
120
100
5 ohm
80
60
27 ohm
40
20
47 ohm
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
I_F (A)
Fig. 17 - Typical Diode I_RR vs. I_F
T_J = 125 °C
100
80
60
40
20
0
400
800
1200
1600
2000
dI_F / dt (A/ μs)
Fig. 18 - Typical Diode I_RR vs. dI_F/dt
V_CC = 600 V; I_F = 75 A
100
80
60
40
20
0
0
10
20
30
40
50
R_G (Ω)
Fig. 19 - Typical Diode I_RR vs. R_g
T_J = 125 °C; I_F = 75 A
16
14
12
10
typical value
8
6
4
2
0
0 100 200 300 400 500 600 700
Q_G, Total Gate Charge (nC)
Fig. 20 - Typical Gate Charge vs. V_GE
I_CE = 5.0 A; L = 600 μH
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.001
0.01
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t₁, Rectangular Pulse Duration (s)
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Revision: 05-Apr-16
6
Document Number: 93172
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