VS-GB75YF120UT Datasheet, PDF (5/10 Pages) Vishay Siliconix – IGBT 4 pack Module, 75 A

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1
TJ = 125°C
0.1
0.01
TJ = 25°C
0.001
400
600
800
1000
1200
V_CES (V)
Fig. 11 - Typical Zero Gate Voltage Collector Current
5.5
5
TJ = 25°C
4.5
4
3.5
TJ = 125°C
3
2.5
2
0
0.2
0.4
0.6
0.8
1
I_C (mA)
Fig. 12 - Typical Threshold Voltage
2500
VS-GB75YF120UT
Vishay Semiconductors
1000
100
tdOFF
tF
tR
tdON
10
20
30
40
50
60
70
80
I_C (A)
Fig. 14 - Typical Switching Time vs. I_C
T_J = 125 °C; L = 500 μH; V_CC = 600 V, R_g = 5 ; V_GE = 15 V
14000
12000
10000
8000
6000
4000
EON
EOFF
2000
0
0
10
20
30
40
50
R_G (Ω)
Fig. 15 - Typical Energy Loss vs. R_g
T_J = 125 °C; L = 500 μH; V_CC = 600 V, I_C = 75 A; V_GE = 15 V
10000
2000
1500
EON
EOFF
1000
100
tdOFF
tF
tR
tdON
1000
30
40
50
60
70
80
I_C (A)
Fig. 13 - Typical Energy Loss vs. I_C
T_J = 125 °C; L = 500 μH; V_CC = 600 V, R_g = 5 ; V_GE = 15 V
10
0
10
20
30
40
50
R_G (Ω)
Fig. 16 - Typical Switching Time vs. R_g
T_J = 125 °C; L = 500 μH; V_CC = 600 V, I_C = 75 A; V_GE = 15 V
Revision: 05-Apr-16
5
Document Number: 93172
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