VS-GB75YF120UT Datasheet, PDF (2/10 Pages) Vishay Siliconix – IGBT 4 pack Module, 75 A

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VS-GB75YF120UT
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Threshold voltage temperature coefficient
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
V_BR(CES)
V_CE(ON)
V_GE(th)
V_GE(th)/T_J
I_CES
V_FM
I_GES
V_GE = 0 V, I_C = 500 μA
I_C = 75 A, V_GE = 15 V
I_C = 100 A, V_GE = 15 V
I_C = 75 A, V_GE = 15 V, T_J = 125 °C
I_C = 100 A, V_GE = 15 V, T_J = 125 °C
V_CE = V_GE, I_C = 250 μA
V_CE = V_GE, I_C = 1 mA (25 °C to 125 °C)
V_GE = 0 V, V_CE = 1200 V
V_GE = 0 V, V_CE = 1200 V, T_J = 125 °C
I_F = 75 A
I_F = 100 A
I_F = 75 A, T_J = 125 °C
I_F = 100 A, T_J = 125 °C
V_GE = ± 20 V
MIN.
1200
-
-
-
-
4.0
-
-
-
-
-
-
-
-
TYP.
-
3.4
3.8
4.0
4.53
5.0
-11
7
580
3.7
4.1
3.7
4.2
-
MAX. UNITS
-
4.0
4.5
V
4.5
5.1
6.0
- mV/°C
250
μA
2000
4.9
5.5
V
5.1
5.7
± 200 nA
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode peak reverse recovery current
Diode reverse recovery time
Total reverse recovery charge
Q_G
Q_GE
Q_GC
E_on
E_off
E_tot
E_on
E_off
E_tot
t_d(on)
t_r
t_d(off)
t_f
RBSOA
SCSOA
I_rr
t_rr
Q_rr
I_C = 75 A
V_CC = 600 V
V_GE = 15 V
I_C = 75 A, V_CC = 600 V
V_GE = 15 V, R_g = 5 , L = 500 μH
T_J = 25 °C ⁽¹⁾
I_C = 75 A, V_CC = 600 V
V_GE = 15 V, R_g = 5 , L = 500 μH
T_J = 125 °C ⁽¹⁾
I_C = 75 A, V_CC = 600 V
V_GE = 15 V, R_g = 5 , L = 500 μH
T_J = 125 °C
T_J = 150 °C, I_C = 200 A
R_g = 10 , V_GE = 15 V to 0 V
T_J = 150 °C
V_CC = 900 V, V_P = 1200 V
R_g = 10 , V_GE = 15 V to 0 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_CC = 200 V
I_F = 50 A
dI/dt = 10 A/μs
T_J = 25 °C
T_J = 125 °C
Note
(1) _{Energy losses include “tail” and diode reverse recovery}
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
630
65
250
1.74
1.46
3.20
2.44
2.35
4.79
268
43
308
127
MAX. UNITS
-
-
nC
-
-
-
-
mJ
-
-
-
-
-
ns
-
-
Fullsquare
10
-
-
μs
-
13
18
A
-
19
23
-
132 189
ns
-
200 270
-
858 1700
nC
-
1900 3105
Revision: 05-Apr-16
2
Document Number: 93172
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