VS-GB75YF120UT Datasheet, PDF (4/10 Pages) Vishay Siliconix – IGBT 4 pack Module, 75 A

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VS-GB75YF120UT
Vishay Semiconductors
160
VGE = 18V
140 ^{VGE = 15V}
VGE = 12V
120 VGE = 9V
100
80
60
40
20
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 5 - Typical IGBT Output Characteristics
T_J = 25 °C; t_p = 500 μs
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 _{VGE = 9V}
100
80
60
40
20
0
012345678
V_CE (V)
Fig. 6 - Typical IGBT Output Characteristics
T_J = 125 °C; t_p = 500 μs
150
140
130
120
110
100
90
80
70
60
50 _{Tj = 25°C}
40 _{Tj = 125°C}
30
20
10
0
0.0
1.0
2.0
3.0
4.0
5.0
V_F (V)
Fig. 7 - Typical Diode Forward Characteristics
t_p = 500 μs
20
18
16
14
12
10
8
6
4
2
0
7
20
18
16
14
12
10
8
6
4
2
0
7
300
250
200
ICE = 75A
ICE = 50A
ICE = 25A
9 11 13 15 17 19
V_GE (V)
Fig. 8 - Typical V_CE vs. V_GE
T_J = 25 °C
ICE = 75A
ICE = 50A
ICE = 25A
9 11 13 15 17 19
V_GE (V)
Fig. 9 - Typical V_CE vs. V_GE
T_J = 125 °C
TJ = 25°C
TJ = 125°C
150
100
50
0
5 6 7 8 9 10 11 12
V_GE (V)
Fig. 10 - Typical Transfer Characteristics
V_CE = 20 V; t_p = 500 μs
Revision: 05-Apr-16
4
Document Number: 93172
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