VS-GB75YF120UT Datasheet, PDF (3/10 Pages) Vishay Siliconix – IGBT 4 pack Module, 75 A

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VS-GB75YF120UT
Vishay Semiconductors
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Resistance
B-value
Maximum operating temperature
R₂₅
R₁₀₀
B_25/50
T_C = 25 °C
T_C = 100 °C
R₂ = R₂₅ exp. [B_25/50 (1/T₂ - 1/(298.15 K))]
Dissipation constant
Thermal time constant
VALUE
5000
493 ± 5 %
3375 ± 5 %
220
2
8
UNITS

K
°C
mW/°C
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
Junction to case IGBT
R_thJC (IGBT)
-
Junction to case DIODE
R_thJC (DIODE)
-
Case to sink, flat, greased surface
R_thCS (MODULE)
-
Mounting torque (M5)
2.7
Weight
-
TYP.
-
-
0.02
-
170
MAX.
0.26
0.56
-
3.3
-
UNITS
°C/W
Nm
g
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120
I_C (A)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
500
1000
100
10
1
0.1
0.01
1
1000
10
100
1000
V_CE (V)
Fig. 3 - Forward SOA
T_C = 25 °C; T_J  150 °C
10000
400
100
300
200
10
100
0
0 20 40 60 80 100 120 140 160
T_C (°C)
Fig. 2 - Power Dissipation vs. Case Temperature
1
10
100
1000
V_CE (V)
Fig. 4 - Reverse Bias SOA
T_J = 150 °C; V_GE = 15 V
10000
Revision: 05-Apr-16
3
Document Number: 93172
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