VS-GB75LA60UF Datasheet, PDF (6/9 Pages) Vishay Siliconix – Higher switching frequency up to 150 kHz

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VS-GB75LA60UF
Vishay Semiconductors
1400
1200
1000
T_J = 125 °C
800
600
400
T_J = 25 °C
200
0
100
200
300
400
500
dI_F/dt (A/μs)
Fig. 17 - Typical Diode Reverse Recovery Charge vs. dI_F/dt
V_rr = 200 V, I_F = 50 A
1
0.1
0.50
0.20
0.01
0.10
0.05
0.02
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 18 - Maximum Thermal Impedance Z_thJC Characteristics (IGBT)
1
0.1
0.50
0.20
0.10
0.05
0.01
0.02
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance Z_thJC Characteristics (Diode)
Revision: 17-Oct-16
6
Document Number: 95858
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