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| VS-GB75LA60UF Datasheet, PDF (2/9 Pages) Vishay Siliconix – Higher switching frequency up to 150 kHz | |||
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VS-GB75LA60UF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 35 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 70 A
VGE = 15 V, IC = 35 A, TJ = 125 °C
VGE = 15 V, IC = 70 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient ofï
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
ïVGE(th)/ïTJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 600 V
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 600 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR
IR = 1 mA
IF = 35 A, VGE = 0 V
Diode forward voltage drop
VFM
IF = 70 A, VGE = 0 V
IF = 35 A, VGE = 0 V, TJ = 125 °C
IF = 70 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = 600 V
TJ = 125 °C, VR = 600 V
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
600
-
-
-
-
2.7
-
-
-
600
-
-
-
-
-
-
-
TYP.
-
1.73
2.31
2.14
3.0
4.5
-10.8
5
0.17
-
1.67
1.96
1.23
1.55
0.1
0.04
-
MAX.
-
2.0
-
-
-
5.4
-
50
-
-
2.33
-
-
-
50
-
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Qg
Qge
IC = 50 A, VCC = 400 V, VGE = 15 V
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
IC = 70 A, VCC = 300 V,
Eoff
VGE = 15 V, Rg = 4.7 ïï¬ï
Etot
L = 500 μH, TJ = 25 °C
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
Eoff
Etot
td(on)
tr
IC = 70 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 ïï¬ ï
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
td(off)
tf
RBSOA
trr
TJ = 150 °C, IC = 120 A, Rg = 22 ïï¬ï
VGE = 15 V to 0 V, VCC = 400 V,ï
VP = 600 V
Diode peak reverse current
Irr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qrr
trr
Irr
IF = 50 A, dIF/dt = 200 A/μs, ï
VR = 200 V, TJ = 125 °C
Qrr
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
320
42
110
0.33
0.46
0.79
0.51
0.56
1.07
166
44
188
53
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
-
64
-
-
4.5
-
-
144
-
-
136
-
-
12
-
-
807
-
UNITS
nC
mJ
ns
ns
A
nC
ns
A
nC
Revision: 17-Oct-16
2
Document Number: 95858
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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