VS-GB75LA60UF Datasheet, PDF (3/9 Pages) Vishay Siliconix – Higher switching frequency up to 150 kHz

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VS-GB75LA60UF
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
IGBT
Diode
T_J, T_Stg
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-40
-
-
-
-
-
-
SOT-227
TYP.
-
-
-
0.05
30
-
-
MAX.
150
0.28
0.53
-
-
1.1 (9.7)
1.3 (11.5)
UNITS
°C
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
150
125
100
T_J = 25 °C
75
50
T_J = 125 °C
T_J = 150 °C
25
0
0
1.0
2.0
3.0
4.0
5.0
V_CE (V)
Fig. 1 - Typical IGBT Output Characteristics, V_GE = 15 V
150
V_GE = 12 V
125
V_GE = 15 V
V_GE = 18 V
100
V_GE = 9 V
75
50
25
0
0
1.0 2.0 3.0 4.0 5.0 6.0
V_CE (V)
Fig. 2 - Typical IGBT Output Characteristics, T_J = 125 °C
160
140
120
DC
100
80
60
40
20
0
0
20
40
60
80 100 120
I_C - Continuous Collector Current (A)
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
4.5
4.0
100 A
3.5
3.0
70 A
2.5
35 A
2.0
1.5
1.0
20 40 60 80 100 120 140 160
T_J (°C)
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Revision: 17-Oct-16
3
Document Number: 95858
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