VS-GB75LA60UF Datasheet, PDF (5/9 Pages) Vishay Siliconix – Higher switching frequency up to 150 kHz

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VS-GB75LA60UF
Vishay Semiconductors
0.6
0.5
0.4
E _on
0.3
0.2
E _off
0.1
0
10 20 30 40 50 60 70 80
I_C (A)
Fig. 11 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, V_CC = 300 V, R_g = 4.7 , V_GE = 15 V, L = 500 μH
1000
100
t_d(off)
t_f
t_d(on)
t_r
10
10 20 30 40 50 60 70 80
I_C (A)
Fig. 12 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, V_CC = 300 V, R_g = 4.7 , V_GE = 15 V, L = 500 μH
3
2.5
E _on
2
1.5
E _off
1
0.5
0
0 5 10 15 20 25 30 35 40 45 50
R_g (Ω)
Fig. 13 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, V_CC = 300 V, I_C = 70 A, V_GE = 15 V, L = 500 μH
1000
t_d(off)
t_d(on)
t_r
100
t_f
10
0
5 10 15 20 25 30 35 40 45 50
R_g (Ω)
Fig. 14 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, V_CC = 300 V, I_C = 70 A, V_GE = 15 V, L = 500 μH
160
150
140
130
120
110
100
90
80
70
60
50
40
100
T_J = 125 °C
T_J = 25 °C
200
300
400
500
dI_F/dt (A/μs)
Fig. 15 - Typical Diode Reverse Recovery Time vs. dI_F/dt
V_rr = 200 V, I_F = 50 A
24
22
20
18
T_J = 125 °C
16
14
12
10
T_J = 25 °C
8
6
4
2
0
100
200
300
400
500
dI_F/dt (A/μs)
Fig. 16 - Typical Diode Reverse Recovery Current vs. dI_F/dt
V_rr = 200 V, I_F = 50 A
Revision: 17-Oct-16
5
Document Number: 95858
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