VS-GB75LA60UF Datasheet, PDF (4/9 Pages) Vishay Siliconix – Higher switching frequency up to 150 kHz

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70
V_CE = 20 V
60
50
40
T_J = 125 °C
T_J = 25 °C
30
20
10
0
2
3
4
5
6
7
8
9
V_GE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
5.0
4.5
T_J = 25 °C
4.0
3.5
T_J = 125 °C
3.0
2.5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I_C (mA)
Fig. 6 - Typical IGBT Gate Threshold Voltage
1000
100
10
1
10
100
1000
V_CE (V)
Fig. 7 - IGBT Reverse BIAS SOA,
T_J = 150 °C, V_GE = 15 V
VS-GB75LA60UF
Vishay Semiconductors
10
1
T_J = 150 °C
0.1
T_J = 125 °C
0.01
0.001
T_J = 25 °C
0.0001
100
200
300
400
500
600
V_CES (V)
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
150
125
T_J = 150 °C
100
T_J = 125 °C
75
T_J = 25 °C
50
25
0
0
0.5 1.0 1.5 2.0 2.5 3.0
V_FM (V)
Fig. 9 - Typical Diode Forward Characteristics
160
140
120
DC
100
80
60
40
20
0
0
20
40
60
80 100 120
I_F - Continuous Forward Current (A)
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Revision: 17-Oct-16
4
Document Number: 95858
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