SUM90142E Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel 200 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUM90142E
Vishay Siliconix
1
Duty Cycle = 0.5
Axis Title
10000
0.1
0.01
0.001
0.2
0.1
0.05
0.02
Single pulse
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Notes:
P_DM
1000
t₁
t₂
1. Duty cycle, D =
t₁
t₂
2. Per unit base = R_thJA = 40 °C/W
100
3. T_JM - T_A = P_DMZ_thJA ^(t)
4. Surface mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
Axis Title
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
10000
1000
100
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75050.
S16-1636-Rev. A, 22-Aug-16
6
Document Number: 75050
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000