SUM90142E Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 200 V (D-S) 175 °C MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUM90142E
Vishay Siliconix
Axis Title
200
10000
V_GS = 10 V thru 7 V
V_GS = 6 V
160
1000
120
Axis Title
150
10000
120
1000
90
80
40
0
0
100
V_GS = 5 V
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
2nd line
10
10
Output Characteristics
60
30
0
0
T_C = 25 °C
100
T_C = 125 °C
T_C = -55 °C
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
10
0.016
Axis Title
10000
0.015
0.014
V_GS = 7.5 V
1000
0.013
0.012
100
V_GS = 10 V
0.011
0
20
40
60
80
I_D - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current and Gate Voltage
7000
Axis Title
10000
5600
4200
C_iss
2800
1400
C_rss
C_oss
0
0
20
40
60
80
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
1000
100
10
100
10
I_D = 60 A
8
6
4
2
Axis Title
10000
1000
V_DS = 100 V, 125 V, 150 V
100
0
10
0
13
26
39
52
65
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
3.0
I_D = 30 A
2.5
2.0
1.5
1.0
Axis Title
10000
V_GS = 10 V
1000
V_GS = 7.5 V
100
0.5
10
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-1636-Rev. A, 22-Aug-16
3
Document Number: 75050
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000