SUM90142E Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 200 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
110
10000
88
1000
66
44
100
22
0
10
0 25 50 75 100 125 150 175
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
SUM90142E
Vishay Siliconix
260
I_D = 10 mA
250
240
230
220
Axis Title
10000
1000
100
Axis Title
100
10
150 °C
25 °C
10000
1000
100
210
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
1
0.00001
0.0001 0.001
0.01
Time (s)
2nd line
I_DAV vs. Time
10
0.1
Note
a. The power dissipation P_D is based on T_J max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1636-Rev. A, 22-Aug-16
5
Document Number: 75050
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