SUM90142E Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 200 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUM90142E
Vishay Siliconix
Axis Title
100
10000
10
1
0.1
0.01
T_J = 150 °C
T_J = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.05
0.04
0.03
Axis Title
I_D = 30 A
10000
T_J = 125 °C
1000
0.02
100
0.01
T_J = 25 °C
0
10
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5
10000
0
I_D = 5 mA 1000
-0.5
-1.0
100
I_D = 250 μA
-1.5
-2.0
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Threshold Voltage
Axis Title
100
10000
80
T_C = -55 °C
60
T_C = 25 °C
1000
40
T_C = 125 °C ₁₀₀
20
0
10
0
5
10 15 20 25 30
I_D - Drain Current (A)
2nd line
Transconductance
1000
100
10
I_DM limited
I_D limited
Axis Title
10000
100 μs ₁₀₀₀
Limited by R_DS(on) ⁽¹⁾
1
1 ms
10 ms ¹⁰⁰
0.1
100 ms, DC
T_C = 25 °C
Single pulse
0.01
0.1
1
BVDSS limited
10
100
10
1000
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
S16-1636-Rev. A, 22-Aug-16
4
Document Number: 75050
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000