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SUM90142E Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 200 V (D-S) 175 °C MOSFET
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SUM90142E
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
TO-263
Top View
S
D
G
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 7.5 V
Qg typ. (nC)
ID (A)
Configuration
200
0.0150
0.0165
58
90
Single
FEATURES
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
• DC/DC converter
• Motor drive switch
• DC/AC inverter
• Solar micro inverter
• Class D audio amplifier
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-263
SUM90142E-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 125 °C
Continuous source-drain diode current
Single pulse avalanche current a
Single pulse avalanche energy a
L = 0.1 mH
Maximum power dissipation
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
200
± 20
90
52
240
90
60
180
375 b
125 b
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
Maximum junction-to-case (drain)
Steady state
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
MAXIMUM
40
0.4
UNIT
°C/W
S16-1636-Rev. A, 22-Aug-16
1
Document Number: 75050
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000