SI8475EDB Datasheet, PDF (6/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.5
Si8475EDB
Vishay Siliconix
1.2
6
0.9
4
0.6
2
0.3
0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
0.0
25
50
75
100
125
150
T_A - Ambient Temperature (°C)
Current Derating ^a
Power Derating
Notes
• When mounted on 1" x 1" FR4 with full copper.
d. The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1692-Rev. D, 20-Jul-15
6
Document Number: 65651
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000