SI8475EDB Datasheet, PDF (5/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si8475EDB
Vishay Siliconix
100
T_J = 150 °C
10
T_J = 25 °C
1
0.10
0.08
I_D = 1 A
0.06
0.04
0.02
T_J = 125 °C
T_J = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.3
1.2
I_D = 250 µA
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
80
60
40
20
0
0.001 0.01
0.1
1
10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-1692-Rev. D, 20-Jul-15
5
Document Number: 65651
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000