SI8475EDB Datasheet, PDF (2/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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Si8475EDB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient, ^{a, b}
Maximum Junction-to-Ambient ^{c, d}
t=5s
t=5s
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Maximum under steady state conditions is 85 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
SYMBOL
R_thJA
R_thJA
TYP.
35
85
MAX.
45
110
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
Forward Transconductance ^a
Dynamic ^b
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = -250 μA
I_D = -250 μA
V_DS = V_GS, I_D = -250 μA
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = 0 V, V_GS = ± 12 V
V_DS = -20 V, V_GS = 0 V
V_DS = -20 V, V_GS = 0 V, T_J = 70 °C
V_DS  -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -1 A
V_GS = -2.5 V, I_D = -1 A
V_DS = -10 V, I_D = -1 A
-20
-
-
V
-
-12
-
mV/°C
-
3.4
-
-0.6
-
-1.5
V
-
-
± 0.5
-
-
± 50
nA
-
-
-1
μA
-
-
-10
-5
-
-
A
-
0.025
0.032

-
0.042
0.051
-
9
-
S
Gate Resistance
R_g
V_GS = -0.1 V, f = 1 MHz
-
4.9
-
k
Turn-On Delay Time
t_d(on)
-
15
25
Rise Time
Turn-Off Delay Time
t_r
V_DD = -10 V, R_L = 10 
-
50
75
t_d(off)
I_D  -1 A, V_GEN = -4.5 V, R_g = 1 
-
110
165
Fall Time
Turn-On Delay Time
t_f
t_d(on)
-
80
120
μs
-
7
15
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = -10 V, R_L = 10 
I_D  -1 A, V_GEN = -10 V, R_g = 1 
-
18
30
-
180
270
Fall Time
t_f
-
80
120
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
I_S
T_A = 25 °C
-
Pulse Diode Forward Current
I_SM
-
Body Diode Voltage
V_SD
I_S = -1 A, V_GS = 0 V
-
Body Diode Reverse Recovery Time
t_rr
-
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
I_F = -1 A, dI/dt = 100 A/μs, T_J = 25 °C
-
-
Reverse Recovery Rise Time
t_b
-
-
-2.3 ^c
A
-
-25
-0.85
-1.2
V
30
60
ns
15
30
nC
13
-
ns
17
-
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1692-Rev. D, 20-Jul-15
2
Document Number: 65651
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000