SI8475EDB Datasheet, PDF (4/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si8475EDB
Vishay Siliconix
1.0
10^-3
0.8
T_J = 25 °C
0.6
0.4
0.2
0.0
0
5
10
15
20
25
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
25
V_GS = 5 V thru 2.5 V
20
10^-4
10^-5
10^-6
T_J = 150 °C
T_J = 25 °C
10^-7
10^-8
10^-9
0
5
10
15
20
25
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10
8
15
V_GS = 2 V
6
10
5
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1.5
I_D = 1 A
1.4
1.3
V_GS = 4.5 V
1.2
1.1
V_GS = 2.5 V
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S15-1692-Rev. D, 20-Jul-15
4
Document Number: 65651
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