SI8475EDB Datasheet, PDF (1/12 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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Si8475EDB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
-20
R_DS(on) ()
0.032 at V_GS = -4.5 V
0.051 at V_GS = -2.5 V
I_D (A) ^{a, e}
-7.7
-6.1
MICRO FOOT^® 1.6 x 1.6
D
D2
847x5xEx
3
1
1 _1.6 ^mm
4^G
S
Backside View
Bump Side View
Marking: 8475E
Ordering Information: 
Si8475EDB-T1-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• Typical ESD protection 3000 V
• Gate-source OVP
• Material categorization: 
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch and battery switch portable devices
• Gate-source over voltage protection (see page 3)
S
G
R
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
V_GS
T_A = 25 °C
T_A = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
T_A = 25 °C
T_A = 70 °C
I_S
T_A = 25 °C
Maximum Power Dissipation
T_A = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditions ^c
VPR
IR / convection
T_J, T_stg
LIMIT
-20
± 12
-7.7 ^a
-6.2 ^a
-4.9 ^b
-3.9 ^b
-25
-2.3 ^a
-0.92 ^b
2.7 ^a
1.8 ^a
1.1 ^b
0.73 ^b
-55 to +150
260
260
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC^® (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T_A = 25 °C.
UNIT
V
A
W
°C
S15-1692-Rev. D, 20-Jul-15
1
Document Number: 65651
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000