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SI8465DB Datasheet, PDF (6/8 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
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Si8465DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
PDM
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
PDM
0.02
Single Pulse
0.01
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 190 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper)
www.vishay.com
6
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
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