SI8465DB Datasheet, PDF (2/8 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si8465DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Ambient^{c, d}
t = 10 s
t = 10 s
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
Symbol
R_thJA
Typical
55
125
Maximum
70
160
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = - 250 µA
I_D = - 250 µA
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 12 V
V_DS = - 20 V, V_GS = 0 V
V_DS = - 20 V, V_GS = 0 V, T_J = 70 °C
V_DS ≤ - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 1.5 A
V_GS = - 2.5 V, I_D = - 1.5 A
V_DS = - 10 V, I_D = - 1.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
V_DS = - 10 V, V_GS = 0 V, f = 1 MHz
V_DS = - 10 V, V_GS = - 10 V, I_D = - 1 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Drain-Source Body Diode Characteristics
V_DS = - 10 V, V_GS = - 4.5 V, I_D = 1 A
V_GS = - 0.1 V, f = 1 MHz
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_g = 1 Ω
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 10 V, R_g = 1 Ω
Continuous Source-Drain Diode
Current
I_S
T_A = 25 °C
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
I_S = - 1 A, V_GS = 0 V
I_F = - 1 A, dI/dt = 100 A/µs, T_J = 25 °C
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.6
- 10
Typ.
- 12
2.8
0.086
0.122
7
450
125
95
12
6
0.85
2.2
7.5
20
20
25
10
7
10
25
10
Max.
- 1.5
± 100
-1
- 10
0.104
0.148
18
9
30
30
40
15
15
15
40
15
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
- 1.5
A
- 15
- 0.8
- 1.2
V
20
40
ns
10
20
nC
10
ns
10
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65363
S09-1922-Rev. A, 28-Sep-09