SI8465DB Datasheet, PDF (5/8 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
1.5
1.2
3
0.9
2
0.6
1
0.3
0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*
Note:
When Mounted on 1" x 1" FR4 with Full Copper.
0.0
25
Si8465DB
Vishay Siliconix
50
75
100
125
150
T_A - Ambient Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
www.vishay.com
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