SI8465DB Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si8465DB
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 20
0.104 at V_GS = - 4.5 V
0.148 at V_GS = - 2.5 V
I_D (A)^{a, e}
- 3.8
- 3.2
Q_g (Typ.)
6 nC
MICRO FOOT
Bump Side View
Backside View
S
G
2
1
S
D
3
4
Device Marking: 8465
xxx = Date/Lot Traceability Code
Ordering Information: Si8465DB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches, Battery Switches and Charger Switches
in Portable Device Applications
• DC/DC Converters
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
± 12
T_A = 25 °C
- 3.8^a
Continuous Drain Current (T_J = 150 °C)
T_A = 70 °C
T_A = 25 °C
I_D
- 3^a
- 2.5^b
T_A = 70 °C
- 2.0^b
A
Pulsed Drain Current
I_DM
- 15
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 1.5^a
- 0.65^b
T_A = 25 °C
1.8^a
Maximum Power Dissipation
T_A = 70 °C
T_A = 25 °C
P_D
1.1^a
0.78^b
W
T_A = 70 °C
0.5^b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
Package Reflow Conditions^c
VPR
IR/Convection
260
°C
260
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T_A = 25 °C.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
www.vishay.com
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