SI7812DN Datasheet, PDF (6/14 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

Si7812DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
30
25
20
15
Package Limited
10
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
60
50
40
30
20
10
0
25
100
50
75
100
125
150
T_C - Case Temperature (°C)
Power, Junction-to-Case
10
T_A
L I_D
BV V_DD
1
0.000001
0.00001
0.0001
0.001
0.01
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 73332
S-83050-Rev. D, 29-Dec-08