SI7812DN Datasheet, PDF (1/14 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

N-Channel 75-V (D-S) MOSFET
Si7812DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.037 at V_GS = 10 V
75
0.046 at V_GS = 4.5 V
I_D (A)
16^e
16^e
Q_g (Typ.)
8 nC
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free)
Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• Low Thermal Resistance PowerPAK^®
Package with Small Size and Low 1.07 mm
Profile
APPLICATIONS
• Primary Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
75
V
V_GS
± 20
T_C = 25 °C
16^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
16^e
7.2^{a, b}
Pulsed Drain Current
T_A = 70 °C
5.7^{a, b}
A
I_DM
25
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
16^e
3.2^{a, b}
Avalanche Current
Single-Pulse Avalanche Energy
I_AS
15
L = 0.1 mH
E_AS
11
mJ
T_C = 25 °C
52
Maximum Power Dissipation
T_C = 70 °C
33
T_A = 25 °C
P_D
3.8^{a, b}
W
T_A = 70 °C
2.4^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 55 to 150
°C
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73332
S-83050-Rev. D, 29-Dec-08
www.vishay.com
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